器件特性评估
R2026b利用这些示例了解参数选择对器件特性的影响。
精选示例
Characterize Condenser Microphone Model
Characterize a condenser microphone model using the Variable Gap Capacitor block.
MOSFET 特性的交互式生成
此示例展示了如何探索参数选择对基于表面电势的 MOSFET 模型 I-V 特性和 C-V 特性的影响。要打开“MOSFET 特性”窗口，请在 MATLAB® 命令行窗口中键入 MOSFETParameterAnalyzer。
LDMOS 特性的交互式g生成
此示例展示了如何探索参数选择对基于表面电势的 p 沟道 LDMOS 场效应晶体管模型的 I-V 特性和 C-V 特性的影响。要打开“LDMOS 特性”窗口，请在 MATLAB® 命令行窗口中运行 LDMOSParameterAnalyzer。
MOSFET 热特性的交互式生成
此示例展示了如何探索参数选择对基于表面电势的 MOSFET 热模型 I-V 特性和 C-V 特性的影响。要打开“MOSFET 热特性”窗口，请在 MATLAB® 命令行窗口中运行 MOSFETThermalParameterAnalyzer。
MOSFET Characterization Using Y Parameters
The generation of I-V and C-V characteristics for an NMOS transistor. Define the bias conditions for the gate-source and drain-source voltage sweeps and the types of plots to be generated by double-clicking the Define Sweep Parameters block. Then click on the "Generate plots" hyperlink in the model. The output capacitance, C_oss, is only shown for sweeps of the drain-source voltage. Note that the C-V characteristics can take several minutes each to generate.
IGBT 特性
此示例展示了如何针对绝缘栅双极晶体管生成 Ic 对 Vce 的曲线。通过双击标注为“Define Conditions (Vge and Vce)”的模块来定义栅极-发射极电压向量以及最小和最大集电极-发射极电压。点击模型中的“绘制曲线”超链接即可运行仿真并绘制仿真结果。
IGBT Thermal Characteristics
Generation of the Ic versus Vce curve for an IGBT at two different temperatures. To generate the plot, click on the hyperlink in the model labeled 'Plot IGBT curves'.
IGBT 动态特性
此示例展示了 IGBT 的动态特性如何随其参数而变化。要使动态特性与数据手册值或测得数据匹配，一个前提条件是设置定义静态 I-V 曲线的参数。有关此内容的信息，请参阅“IGBT 特性”示例 IGBTCharacteristics。正确设置静态参数后，可以按如下方式设置动态参数：
IGBT 行为模型
此示例测试框架可用于验证 Simscape™ Electrical™ N 沟道 IGBT 的“简化的 I-V 特性和基于事件的定时”建模选项。此建模选项仅需要与通态栅极电压对应的 I-V 数据，并通过将集电极-发射极电压作为仿真时间的线性函数来对导通上升时间和关断下降时间进行建模。这种方法的优点是仿真速度更快，参数化更容易。
IGBT 损耗特性
此示例展示了如何使用 Simscape™ Electrical™ 详细开关器件模型来创建开关损耗数据表。然后，可以将此数据表与分段线性开关器件组件模型一起使用，以预测为快速仿真和/或定步长仿真配置的系统模型的总损耗。
MOSFET 特性
此示例展示了如何生成 N 沟道 MOSFET 的特性曲线。通过双击标注为 'Define Conditions (Vg and Vds)' 的模块来定义栅极电压向量以及最小和最大漏极-源极电压。然后点击模型中的 plot results 超链接。
Nonlinear Inductor Characteristics
A comparison of nonlinear inductor behavior for different parameterizations. Starting with fundamental parameter values, the parameters for linear and nonlinear representations are derived. These parameters are then used in a Simscape™ model and the simulation outputs compared.
Inductor with Hysteresis
How modifying the equation coefficients of the Jiles-Atherton magnetic hysteresis equations affects the resulting B-H curve. The simulation parameters are configured to run four complete AC cycles with initial field strength (H) and magnetic flux density (B) both set to zero.
Nonlinear Transformer Characteristics
Calculation and confirmation of a nonlinear transformer core magnetization characteristic. Starting with fundamental parameter values, the core characteristic is derived. This is then used in a Simscape™ model of an example test circuit which can be used to plot the core magnetization characteristic on an oscilloscope. Model outputs are then compared to the known values.
NPN 双极晶体管特性
此示例展示了如何针对 NPN 双极晶体管生成 Ic 对 Vce 的曲线。通过双击标注为 Define Conditions (Ib and Vce) 的模块来定义基极电流向量以及最小和最大集电极-发射极电压。点击模型中的 plot curves 超链接，可运行测试并生成曲线图。
PNP 双极晶体管特性
此示例展示了如何针对 PNP 双极晶体管生成 Ic 对 Vce 的曲线。通过双击标注为 Define Conditions (Ib and Vce) 的模块来定义基极电流向量以及最小和最大集电极-发射极电压。点击模型中的 plot curves 超链接，可运行测试并生成曲线图。
Schottky Barrier Diode Characteristics
Generation of the current versus voltage curve for a Schottky barrier diode. Define the vector of temperatures for which to plot the characteristics by double clicking on the block labeled 'Define Temperatures for Tests'. Run the tests and plot the I-V curves by clicking in the model on the hyperlink 'plot curves'.
Thyristor Static Behavior Validation
Validation of the static behavior of the Thyristor block against its mask values. Mask values are closely related to datasheet values, and the thyristor block uses these values to calculate the coefficients of the equations used to model it.
Thyristor Dynamic Behavior Validation
Validation of the dynamic behavior of the Thyristor block against its mask values. Mask values are closely related to datasheet values, and the Thyristor block uses these values to calculate the coefficients of the equations used to model it. Double-click on each of the test subsystems for further information on the tests.
SPICE Conversion of a MOSFET Subcircuit and Validation
Convert a metal-oxide-semiconductor field-effect transistor (MOSFET) subcircuit into an equivalent Simscape™ component and compare the Spice and Simscape plots for some standard MOSFET characteristics, namely Id versus Vgs, Id versus Vds, Qiss/ Gate charge, Qoss/ Output charge, and Breakdown voltage. The subcircuit2ssc function converts all the subcircuit components inside a SPICE netlist file into one or more equivalent Simscape files.
Parameterize a Lookup Table-Based MOSFET from SPICE
Use the SPICE simulation results of a metal-oxide-semiconductor field-effect transistor (MOSFET) to set the parameter values of an N-Channel MOSFET (Lookup table-based) in Simscape™. Then, it compares the N-Channel MOSFET characteristics in Simscape with the SPICE netlist simulation results.
洗衣机故障分析
此示例展示了如何对洗衣机进行建模，并在其运行过程中引入故障。此示例对洗衣机供水系统在特定时刻发生故障时系统的响应情况进行了建模。电机关闭，并通过排出外筒中已部分注入的水来中止洗衣机的运行。
SiC MOSFET Parameterization Using Simulation Results from SPICE
Generate lookup table data for a silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) from SPICE subcircuits by using the ee.spice.semiconductorSubcircuit2lookup function and parameterize an N-Channel MOSFET block in Simscape™ Electrical™.
