半导体
R2026a使用离散半导体器件对功率进行转换和整流。
有关决定使用哪个模块来为您的应用进行半导体器件建模的帮助，请参阅选择模块来建模半导体器件。
Simscape 模块
 | Current Limiter | Behavioral model of current limiter |
 | Diode | Piecewise linear, exponential, or tabulated diode |
 | Gate Driver | Behavioral model of gate driver integrated circuit |
 | GTO | Gate Turn-Off Thyristor |
 | Half-Bridge Driver | Behavioral model of half-bridge driver integrated circuit |
 | Half-Bridge (Ideal, Switching) | Half-bridge with ideal switches and thermal port |
 | Ideal Semiconductor Switch | Ideal Semiconductor Switch |
 | IGBT (Ideal, Switching) | Ideal insulated-gate bipolar transistor for switching applications |
 | MOSFET (Ideal, Switching) | Ideal N-channel MOSFET for switching applications |
 | N-Channel IGBT | N-Channel insulated gate bipolar transistor |
 | N-Channel JFET | N-Channel junction field-effect transistor |
 | N-Channel LDMOS FET | N-Channel laterally-diffused metal-oxide-semiconductor or vertically-diffused metal-oxide-semiconductor transistors suitable for high voltage |
 | N-Channel MOSFET | N-Channel metal-oxide-semiconductor field-effect transistor using either Shichman-Hodges equation or surface-potential-based model |
 | NMOS Capacitor | N-type metal-oxide-semiconductor capacitor (自 R2024b 起) |
 | NPN Bipolar Transistor | NPN bipolar transistor using enhanced Ebers-Moll equations |
 | Optocoupler | Behavioral model of optocoupler as LED, current sensor, and controlled current source |
 | P-Channel JFET | P-Channel junction field-effect transistor |
 | P-Channel LDMOS FET | P-Channel laterally-diffused metal-oxide-semiconductor or vertically-diffused metal-oxide-semiconductor transistors suitable for high voltage |
 | P-Channel MOSFET | P-Channel metal-oxide-semiconductor field-effect transistor using either Shichman-Hodges equation or surface-potential-based model |
 | PMOS Capacitor | P-type metal-oxide-semiconductor capacitor (自 R2024b 起) |
 | PNP Bipolar Transistor | PNP bipolar transistor using enhanced Ebers-Moll equations |
 | Semiconductor Switch Selector | Controlled semiconductor switch at multiple fidelity levels (自 R2025a 起) |
 | SPICE-Imported MOSFET | MOSFET with built-in parts parameterized from SPICE subcircuit |
 | Thyristor | Thyristor using NPN and PNP transistors |
 | Thyristor (Piecewise Linear) | Thyristor |
函数
ee_getEfficiency | Calculate efficiency as function of dissipated power losses |
ee_importDeviceParameters | 从 Hitachi、Infineon 或 Wolfspeed XML 数据手册中导入理想半导体模块参数 |
ee_getPowerLossSummary | Calculate dissipated power losses and switching losses |
ee_getPowerLossTimeSeries | Calculate dissipated power losses and switching losses, and return time series data |
ee.spice.semiconductorSubcircuit2lookup | Generate lookup table data for three- or four-terminal device by running SPICE (自 R2022a 起) |
ee.spice.diodeSubcircuit2lookup | Generate lookup table data for two-terminal device by running SPICE (自 R2023a 起) |
generateSemiconductorSwitchROM | Generate reduced-order model of semiconductor switch subsystem (自 R2024b 起) |
generateSemiconductorSubcircuitROM | Generate reduced-order model of semiconductor switch by running SPICE (自 R2025a 起) |
主题
- 选择模块来建模半导体器件
确定所需的保真度级别，选择正确的模块以该保真度级别对半导体器件进行建模，并为模块进行参数化设置。
- Parameterize Blocks from Data Sheets
Overview of techniques used to specify block parameters to match the data from manufacturer data sheets.
- Parameterize Piecewise Linear Diode Model from Data Sheet
Specify block parameters for a Piecewise Linear Diode to match the data from manufacturer data sheets.
- Parameterize Exponential Diode from Data Sheet
Specify block parameters for an Exponential Diode to match the data from manufacturer data sheets.
- Parameterize Exponential Diode from SPICE Netlist
Specify block parameters for an Exponential Diode to match the SPICE netlist data.
- Simulating Thermal Effects in Semiconductors
Simulate generated heat and device temperature by using the thermal ports.
- Plot Basic I-V Characteristics of Semiconductor Blocks
Plot basic I-V characteristics of semiconductor blocks based on block parameter values.
- MOSFET Characteristics Viewer
Verify MOSFET model behavior based on specified parameter values.
精选示例
Improve Simulation Speed of Power Electronics Systems with Reduced Order Modeling
Enhance the model simulation speed of an electro-thermal DC-DC step-down converter by converting a high-fidelity switch to a reduced order model (ROM) switch. This conversion enables faster design iterations and analysis.
开关音频功率放大器
此示例展示了一个开关音频功率放大器电路。开关音频功率放大器比传统功率放大器更高效，因为开关器件仅在完全导通和完全关断状态下工作。此音频功率放大器采用 1 MHz 的开关频率，并配备 PI 反馈控制器，可确保输出电压能够跟踪 2 kHz 和 2.5 kHz 的正弦波输入。频谱分析仪中绘制了功率谱，可为控制器和滤波器参数的选取提供依据。
太阳能功率逆变器
确定单级太阳能逆变器的效率。
Protect Components During Fault Using Current Limiter Block
Use a Current Limiter block to protect a resistor from a short circuit or failure of the load.
Configure Current Limiter with Variable Asymmetric Limits
Implement a current limiter device with variable asymmetric limits using the Current Limiter block in Simscape™ Electrical™.
