IR2110 Gate Driver Circuit
This model demonstrates the operating principle of IR2110 to drive both high side and low side MOSFET.
Developed by Rodney Tan (PhD)
Version 1.00 (May 2025)
This model demonstrates the operating principle of IR2110 to drive both high side and low side MOSFET. The driver circuit inside IR2110 was modeled using ideal switch based on the datasheet output circuit.
This model come with independent high-side and low-side test load and half bridge test load.
The user can test the drive performance by changing the PWM switching frequency to the MOSFET gate and the load current by changing the load resistor.
引用格式
Rodney Tan (2026). IR2110 Gate Driver Circuit (https://ww2.mathworks.cn/matlabcentral/fileexchange/181185-ir2110-gate-driver-circuit), MATLAB Central File Exchange. 检索时间: .
| 版本 | 已发布 | 发行说明 | Action |
|---|---|---|---|
| 1.0.0 |
