Hello Kai,
I understand that you want to calculate switching losses for the Ideal N-channel MOSFET for switching applications.
The specified block introduces switching losses by incrementing the junction temperature with a value equivalent to the switching loss divided by the total thermal mass at the junction.
It is imperative to define the energy dissipated during a single switch-on and switch-off event. Additionally, you need to provide the corresponding values of the off-state voltage and on-state current at which the losses are determined. The customization of switching losses is feasible, depending on the available data.
Utilizing "Use last on/off-state current/voltage from the previous cycle for turn-on/off losses" may not be advantageous, as the documentation case suggests its specificity to modeling capacitance across the switching device or modeling switching device lead inductance, neither of which aligns with the current scenario.
For more information, you can refer to the documentation section explaining the thermal losses for the mentioned device here.
Parasitics do contribute to the switching losses. But there are other factors as well like frequency and conduction losses. For a comprehensive understanding you can refer to this third party journal (discretion required).
I hope it helps resolve your issue!
