Unable to connect generated simscape model of TK22E10N1 from Simulink-PS converter to the node 2( Node 1 as Anode, Node 2 as Gate and, Node 3 as Source)

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Query 1: Unable to connect generated simscape model of TK22E10N1 from Simulink-PS converter to the node 2
Query 2: subcircuit2ssc('TK9R6E15Q5.cir','+mylibrary');
And one other model unable to built and showing these errors
Generating Simulink library 'mylibrary_lib' in the current directory 'C:\Users\hp\Desktop\mylib' ...
Error using sscbuild (line 53)
Failed to generate 'mylibrary_lib'
Error in pm.legacy.internal.support
Error in pm.legacy.internal.support
Error in ssc_build (line 5)
[varargout{1:nargout}] = pm.legacy.internal.support('sscbuild', mfilename, varargin);
^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^
Caused by:
''MOS model'' value must be either 1 or 3.
• In ee.additional.spice_semiconductors.spice_nmos
• In mylibrary.tk22e10n1_g0_00 (line 125)
.ssc file for TK9R6E15Q5 as under
component tk9r6e15q5_g0_00
% tk9r6e15q5_g0_00
% Component automatically generated from a SPICE netlist for subcircuit TK9R6E15Q5_G0_00.
% MATLAB version: 24.2.
% Simscape Electrical version: 24.2.
% Simscape code generated on: 24-Sep-2025 13:01:20
%
% The subcircuit2ssc function does not support these SPICE parameters:
% D0: tnom = 25
% D1: tnom = 25
% D2: tnom = 25
% D3: tnom = 25
% M0: a0 = 3.7587
% M0: a1 = 0
% M0: a2 = 1
% M0: acde = 1
% M0: af = 1
% M0: ags = 1.2756
% M0: alpha0 = 0
% M0: alpha1 = 0
% M0: at = 33000
% M0: b0 = 0
% M0: b1 = 0
% M0: beta0 = 30
% M0: capmod = 3
% M0: cdsc = 0.00024
% M0: cdscb = 0
% M0: cdscd = 0
% M0: cf = 0
% M0: cgdl = 1.25e-08
% M0: cgsl = 6e-09
% M0: cit = 0
% M0: cjswg = 1e-12
% M0: ckappa = 1.4
% M0: clc = 1e-07
% M0: cle = 0.6
% M0: dlc = 0
% M0: drout = 0.56
% M0: dsub = 0.56
% M0: dvt0 = 2.2
% M0: dvt0w = 0
% M0: dvt1 = 0.53
% M0: dvt1w = 5300000
% M0: dvt2 = -0.032
% M0: dvt2w = -0.032
% M0: dwb = 0
% M0: dwc = 0.8287
% M0: dwg = 0
% M0: ef = 1
% M0: eta0 = 0.08
% M0: etab = -0.07
% M0: k1 = 0.5
% M0: k2 = 0
% M0: k3 = 80
% M0: k3b = 0
% M0: keta = -0.047
% M0: kf = 0
% M0: kt1 = -1.23
% M0: kt1l = 0
% M0: kt2 = 0.022
% M0: mjswg = 0.33
% M0: mobmod = 1
% M0: moin = 15
% M0: nch = 1.7e+17
% M0: nfactor = 2.55
% M0: ngate = 0
% M0: nj = 1
% M0: nlx = 1.74e-07
% M0: noff = 1
% M0: noimod = 1
% M0: pbsw = 1
% M0: pbswg = 1
% M0: pclm = 9
% M0: pdiblc1 = 0.5808
% M0: pdiblc2 = 0.0095702
% M0: pdiblcb = 0
% M0: prt = 25500
% M0: prwb = 0
% M0: prwg = 0
% M0: pscbe1 = 424000000
% M0: pscbe2 = 1e-09
% M0: pvag = 0
% M0: rdsw = 12400
% M0: tcj = 0
% M0: tcjsw = 0
% M0: tcjswg = 0
% M0: tnom = 25
% M0: tpb = 0
% M0: tpbsw = 0
% M0: tpbswg = 0
% M0: u0 = 3000
% M0: ua = 1.0402e-11
% M0: ua1 = 4.31e-09
% M0: ub = 5.87e-19
% M0: ub1 = -7.61e-18
% M0: uc = -4.65e-11
% M0: uc1 = -5.6e-11
% M0: ute = -0.15
% M0: voff = -0.31
% M0: voffcv = 0
% M0: vsat = 85242.8201
% M0: vth0 = 5
% M0: w0 = 2.5e-06
% M0: wr = 1
% M0: xpart = 0
% M0: xti = 3
% If possible, you have to manually implement them to achieve complete
% functionality. Refer to the documentation page of the blocks relevant to
% your conversion inside the Simscape Electrical Additional Components
% library.
nodes
node_1 = foundation.electrical.electrical; % node_1
node_2 = foundation.electrical.electrical; % node_2
node_3 = foundation.electrical.electrical; % node_3
end
nodes(Access=protected, ExternalAccess=none)
node_22 = foundation.electrical.electrical;
node_10 = foundation.electrical.electrical;
end
components(ExternalAccess=observe)
M0 = ee.additional.spice_semiconductors.spice_nmos( ...
AD={1.7e-06,'m^2'}, AS={1.7e-06,'m^2'}, CBD={0,'F'}, CBS={0,'F'}, ...
CGBO={0,'F/m'}, CGDO={9e-12,'F/m'}, CGSO={8.5e-08,'F/m'}, ...
CJ={0,'F/m^2'}, CJSW={1e-12,'F/m'}, DELTA={0.0058513,'1'}, ...
ETA={0,'1'}, FC={0.5,'1'}, GAMMA={0,'V^0.5'}, IS={1e-14,'A'}, ...
JS={0,'A/m^2'}, KAPPA={0.2,'1'}, KP={1e-5,'A/V^2'}, ...
LAMBDA={0,'1/V'}, LD={0,'m'}, LENGTH={1.3e-06,'m'}, ...
LEVEL={3,'1'}, ... % <---- changed from 7 to 3
SCALE={1,'1'}, MJ={0.5,'1'}, MJSW={0.33,'1'}, N={1,'1'}, ...
NEFF={1,'1'}, NFS={0,'1/cm^2'}, NSS={1e10,'1/cm^2'}, ...
NSUB={1e17,'1/cm^3'}, NRD={0,'1'}, NRS={0,'1'}, PB={1,'V'}, ...
PD={3.4,'m'}, PHI={0.7,'V'}, PS={3.4,'m'}, RD={1,'Ohm'}, ...
RS={1,'Ohm'}, RSH={0,'Ohm'}, THETA={0,'1/V'}, TOX={4e-08,'m'}, ...
TPG={1,'1'}, UCRIT={10000,'V/cm'}, UEXP={0,'1'}, ...
U0={600,'cm^2/(V*s)'}, VMAX={0,'m/s'}, VTO={5,'V'}, ...
XJ={1.5e-07,'m'}, WIDTH={1.7,'m'}, Ci_param={3,'1'}, ...
Cov_param=2, C_param=2);
D0 = ee.additional.spice_semiconductors.spice_diode(AREA={1,'m^2'},SCALE={1,'1'},IS={9.9999e-10,'A/m^2'}, ...
IKF={Inf,'A/m^2'},ISR={0,'A/m^2'},N={1.338,'1'},NR={2,'1'},M={0.55,'1'},VJ={2.8,'V'},RS={0.0034725,'Ohm*m^2'}, ...
C_param={2,'1'},CJO={2.4e-09,'F/m^2'},FC={0.5,'1'},TT={2.2424e-08,'s'},RevBrk={2,'1'},BV={165,'V'},IBV={0.01,'A/m^2'}, ...
IBVL={1e-10,'A/m^2'},NBV={1,'1'},NBVL={1,'1'},XTI={3,'1'},EG={1.11,'eV'},TIKF={0,'K^-1'},TRS1={0,'K^-1'}, ...
TRS2={0,'K^-2'},TBV1={0,'K^-1'},TBV2={0,'K^-2'});
D1 = ee.additional.spice_semiconductors.spice_diode(AREA={1,'m^2'},SCALE={1,'1'},IS={9.9999e-10,'A/m^2'}, ...
IKF={Inf,'A/m^2'},ISR={0,'A/m^2'},N={1.338,'1'},NR={2,'1'},M={0.5,'1'},VJ={5,'V'},RS={0.0034725,'Ohm*m^2'}, ...
C_param={2,'1'},CJO={1.7e-10,'F/m^2'},FC={0.5,'1'},TT={2.2424e-08,'s'},RevBrk={2,'1'},BV={Inf,'V'},IBV={1e-10,'A/m^2'}, ...
IBVL={1e-10,'A/m^2'},NBV={1,'1'},NBVL={1,'1'},XTI={3,'1'},EG={1.11,'eV'},TIKF={0,'K^-1'},TRS1={0,'K^-1'}, ...
TRS2={0,'K^-2'},TBV1={0,'K^-1'},TBV2={0,'K^-2'});
D2 = ee.additional.spice_semiconductors.spice_diode(AREA={1,'m^2'},SCALE={1,'1'},IS={1e-15,'A/m^2'},IKF={Inf,'A/m^2'}, ...
ISR={0,'A/m^2'},N={1,'1'},NR={2,'1'},M={0.5,'1'},VJ={1,'V'},RS={1e-12,'Ohm*m^2'},C_param={2,'1'},CJO={0,'F/m^2'}, ...
FC={0.5,'1'},TT={0,'s'},RevBrk={2,'1'},BV={Inf,'V'},IBV={1e-10,'A/m^2'},IBVL={1e-10,'A/m^2'},NBV={1,'1'}, ...
NBVL={1,'1'},XTI={3,'1'},EG={1.11,'eV'},TIKF={0,'K^-1'},TRS1={0,'K^-1'},TRS2={0,'K^-2'},TBV1={0,'K^-1'}, ...
TBV2={0,'K^-2'});
D3 = ee.additional.spice_semiconductors.spice_diode(AREA={1,'m^2'},SCALE={1,'1'},IS={1e-15,'A/m^2'},IKF={Inf,'A/m^2'}, ...
ISR={0,'A/m^2'},N={1,'1'},NR={2,'1'},M={0.5,'1'},VJ={1,'V'},RS={1e-12,'Ohm*m^2'},C_param={2,'1'},CJO={0,'F/m^2'}, ...
FC={0.5,'1'},TT={0,'s'},RevBrk={2,'1'},BV={Inf,'V'},IBV={1e-10,'A/m^2'},IBVL={1e-10,'A/m^2'},NBV={1,'1'}, ...
NBVL={1,'1'},XTI={3,'1'},EG={1.11,'eV'},TIKF={0,'K^-1'},TRS1={0,'K^-1'},TRS2={0,'K^-2'},TBV1={0,'K^-1'}, ...
TBV2={0,'K^-2'});
R2 = foundation.electrical.elements.resistor(R={1e+009,'Ohm'});
R3 = foundation.electrical.elements.resistor(R={1e+009,'Ohm'});
RG = foundation.electrical.elements.resistor(R={1.6,'Ohm'});
end
connections
connect(M0.dx,node_1);
connect(M0.gx,node_22);
connect(M0.sx,node_3);
connect(M0.bx,node_3);
connect(D0.p,node_3);
connect(D0.n,node_1);
connect(D1.p,node_3);
connect(D1.n,node_1);
connect(D2.p,node_2);
connect(D2.n,node_10);
connect(D3.p,node_3);
connect(D3.n,node_10);
connect(R2.p,node_10);
connect(R2.n,node_2);
connect(R3.p,node_10);
connect(R3.n,node_3);
connect(RG.p,node_2);
connect(RG.n,node_22);
end
end
Kindly help me for the same.

回答(1 个)

Umar
Umar 2025-9-24,15:15

Hi @ Ajit Singh,

I need to mention upfront that I don't have direct access to Simscape or toolbox, so this response is based on research through MathWorks documentation.

Query 1: Connection Problem with Node 2 From your Simulink diagram and .ssc file, the issue appears to be with port connectivity. Your generated component has node_2 as an external electrical port, but there may be a mismatch between the Simulink-PS Converter and the Simscape block port mapping. Verify that: * The generated Simscape block properly exposes all three electrical ports * You're connecting to the correct physical port corresponding to node_2

Query 2: The LEVEL Parameter Error The error "MOS model" value must be either 1 or 3 is straightforward - the Simscape SPICE NMOS block only supports LEVEL 1 and LEVEL 3 MOSFET models. Your SPICE model uses LEVEL 7 (BSIM3v3), which is incompatible.

Simply changing LEVEL=7 to LEVEL=3 won't work because: 1. LEVEL 7 and LEVEL 3 use completely different physics equations 2. All those "not supported" parameters (capmod, mobmod, dvt0, pdiblc1, etc.) are BSIM3v3-specific and don't exist in LEVEL 3

Solutions: 1. Get LEVEL 1 or 3 compatible SPICE models from Toshiba for your TK22E10N1 and TK9R6E15Q5 transistors 2. The subcircuit2ssc function has limitations and works best with simpler device models 3. Consider using standard Simscape power MOSFET blocks instead of SPICE conversion 4. Try the ee.spice.semiconductorSubcircuit2lookup function to create lookup tables from your existing SPICE models

The fundamental issue is that modern power MOSFET SPICE models use advanced physics models that exceed the basic SPICE conversion tool's capabilities.

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