Semiconductors
Convert and rectify power using discrete semiconductor devices.
For help deciding which block to use to model a semiconductor device for your application, see Choose Blocks to Model Semiconductor Devices.
Simscape Blocks
Current Limiter | Behavioral model of current limiter |
Diode | Piecewise linear, exponential, or tabulated diode |
Gate Driver | Behavioral model of gate driver integrated circuit |
GTO | Gate Turn-Off Thyristor |
Half-Bridge Driver | Behavioral model of half-bridge driver integrated circuit |
Half-Bridge (Ideal, Switching) | Half-bridge with ideal switches and thermal port (Since R2021b) |
Ideal Semiconductor Switch | Ideal Semiconductor Switch |
IGBT (Ideal, Switching) | Ideal insulated-gate bipolar transistor for switching applications |
MOSFET (Ideal, Switching) | Ideal N-channel MOSFET for switching applications |
N-Channel IGBT | N-Channel insulated gate bipolar transistor |
N-Channel JFET | N-Channel junction field-effect transistor |
N-Channel LDMOS FET | N-Channel laterally-diffused metal-oxide-semiconductor or vertically-diffused metal-oxide-semiconductor transistors suitable for high voltage |
N-Channel MOSFET | N-Channel metal-oxide-semiconductor field-effect transistor using either Shichman-Hodges equation or surface-potential-based model |
NMOS Capacitor | N-type metal-oxide-semiconductor capacitor (Since R2024b) |
NPN Bipolar Transistor | NPN bipolar transistor using enhanced Ebers-Moll equations |
Optocoupler | Behavioral model of optocoupler as LED, current sensor, and controlled current source |
P-Channel JFET | P-Channel junction field-effect transistor |
P-Channel LDMOS FET | P-Channel laterally-diffused metal-oxide-semiconductor or vertically-diffused metal-oxide-semiconductor transistors suitable for high voltage |
P-Channel MOSFET | P-Channel metal-oxide-semiconductor field-effect transistor using either Shichman-Hodges equation or surface-potential-based model |
PMOS Capacitor | P-type metal-oxide-semiconductor capacitor (Since R2024b) |
PNP Bipolar Transistor | PNP bipolar transistor using enhanced Ebers-Moll equations |
SPICE-Imported MOSFET | Predefined MOSFET parameterized by external SPICE subcircuit (Since R2020b) |
Thyristor | Thyristor using NPN and PNP transistors |
Thyristor (Piecewise Linear) | Thyristor |
Functions
ee_getEfficiency | Calculate efficiency as function of dissipated power losses |
ee_importDeviceParameters | Parameterize ideal semiconductor block from Hitachi or Infineon XML file (Since R2021b) |
ee_getPowerLossSummary | Calculate dissipated power losses and switching losses |
ee_getPowerLossTimeSeries | Calculate dissipated power losses and switching losses, and return time series data |
ee.spice.semiconductorSubcircuit2lookup | Generate lookup table data for three-terminal or four-terminal devices from SPICE subcircuit (Since R2022a) |
ee.spice.diodeSubcircuit2lookup | Generate lookup table data for two-terminal devices from SPICE subcircuit (Since R2023a) |
Topics
- Parameterizing Blocks from Datasheets
Overview of techniques used to specify block parameters to match the data from manufacturer datasheets.
- Parameterize a Piecewise Linear Diode Model from a Datasheet
Specify block parameters for a Piecewise Linear Diode to match the data from manufacturer datasheets.
- Parameterize an Exponential Diode from a Datasheet
Specify block parameters for an Exponential Diode to match the data from manufacturer datasheets.
- Parameterize an Exponential Diode from SPICE Netlist
Specify block parameters for an Exponential Diode to match the SPICE netlist data.
- Simulating Thermal Effects in Semiconductors
Simulate generated heat and device temperature by using the thermal ports.
- Plot Basic I-V Characteristics of Semiconductor Blocks
Plot basic I-V characteristics of semiconductor blocks based on block parameter values.
- MOSFET Characteristics Viewer
Verify MOSFET model behavior based on specified parameter values.