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Two-Quadrant Chopper

Two-quadrant controlled DC-DC chopper

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  • Two-Quadrant Chopper block

Libraries:
Simscape / Electrical / Semiconductors & Converters / Converters

Description

The Two-Quadrant Chopper block represents a two-quadrant controlled chopper for converting a fixed DC input to a variable DC output. The block contains two switching devices. Options for the type of switching devices are:

  • GTO — Gate turn-off thyristor. For information about the I-V characteristic of the device, see GTO.

  • Ideal semiconductor switch — For information about the I-V characteristic of the device, see Ideal Semiconductor Switch.

  • IGBT — Insulated-gate bipolar transistor. For information about the I-V characteristic of the device, see IGBT (Ideal, Switching).

  • MOSFET — N-channel metal-oxide-semiconductor field-effect transistor. For information about the I-V characteristic of the device, see MOSFET (Ideal, Switching).

  • Thyristor — For information about the I-V characteristic of the device, see Thyristor (Piecewise Linear).

  • Averaged Switch — Semiconductor switch with an antiparallel diode. The control signal port G accepts values in the interval [0,1]. When G is equal to 0 or 1, the averaged switch is fully opened or fully closed respectively. The switch behaves similarly to the Ideal Semiconductor Switch block with an antiparallel diode. When G is between 0 and 1, the averaged switch is partly opened. You can average the pulse-width modulation (PWM) signal over a specified period. You can then undersample the model and use modulation waveforms instead of PWM signals.

Specify Chopper Quadrants

You can choose the quadrants where the Two-Quadrant Chopper operates. To select the quadrants, set the Modeling option parameter to either:

  • First and second quadrant. The figures show the equivalent circuit and the operation for the first- and second- quadrant model.

  • First and fourth quadrant. The figures show the equivalent circuit and the operation for the first- and fourth- quadrant model.

Protection

The block contains an integral protection diode for each switching device. The integral diode protects the semiconductor device by providing a conduction path for reverse current. An inductive load can produce a high reverse-voltage spike when the semiconductor device suddenly switches off the voltage supply to the load.

To configure the internal protection diode block, use the Diode parameters. This table shows how to set the Model dynamics parameter based on your goals.

GoalsValue to SelectIntegral Protection Diode
Prioritize simulation speed.Diode with no dynamicsThe Diode block
Prioritize model fidelity by precisely specifying reverse-mode charge dynamics.Diode with charge dynamicsThe dynamic model of the Diode block

You can also include a snubber circuit for each switching device. Snubber circuits contain a series-connected resistor and capacitor. They protect switching devices against high voltages that inductive loads produce when the device turns off the voltage supply to the load. Snubber circuits also prevent excessive rates of current change when a switching device turns on.

To include and configure a snubber circuit for each switching device, use the Snubbers parameters.

Gate Control

To connect Simulink® gate-control voltage signals to the gate ports of the internal switching devices:

  1. Convert each voltage signal using a Simulink-PS Converter block.

  2. Multiplex the converted gate signals into a single vector using a Two-Pulse Gate Multiplexer block.

  3. Connect the vector signal to the G port.

Piecewise Constant Approximation in Averaged Switch for FPGA Deployment

If you set the Switching device parameter to Averaged switch and your model uses a partitioning solver, this block produces nonlinear partitions because the average mode equations include modes, Gsat that are functions of the input G. To make these equations compatible with hardware description language (HDL) code generation, and therefore FPGA deployment, set the Integer for piecewise constant approximation of gate input (0 for disabled) parameter to a value greater than 0. This block then treats the Gsat mode as a piecewise constant integer with a fixed range. This turns the previously nonlinear partitions to linear time varying partitions.

An integer value in the range [0,K], where K is the value of the Integer for piecewise constant approximation of gate input (0 for disabled), is now associated with each real value mode in the range [0,1]. The block computes the piecewise constant mode by dividing the original mode by K to normalize it back to the range [0,1]:

uI=(floor(u⋅K))u^=uIK

Examples

First and Fourth Quadrant Chopper Control

First and Fourth Quadrant Chopper Control

Control a two-quadrant chopper. The two-quadrant chopper operates in the first and fourth quadrants, allowing positive and negative output voltage. The Control subsystem implements a simple PI-based control algorithm for controlling the output current. The total simulation time (t) is 0.5 seconds. At t = 0.25 seconds, the polarity of the load DC source E is changed.

First and Second Quadrant Chopper Control

First and Second Quadrant Chopper Control

Control a two-quadrant chopper. The two-quadrant chopper operates in the first and second quadrants, allowing positive and negative output current. The Control subsystem implements a simple PI-based control algorithm for controlling the output current. The load of the system is considered constant throughout the simulation.

Synchronous Machine State-Space Control

Synchronous Machine State-Space Control

Control currents in a synchronous machine (SM) based traction drive using state-space control. A high-voltage battery feeds the SM through a controlled three-phase converter for the stator windings and through a controlled two-quadrant chopper for the rotor winding. An ideal angular velocity source provides the load. The SM operates below the base speed. At each sample instant, the torque request is converted to relevant current references using the zero d-axis control approach. A state-feedback controller controls the currents in the rotor reference frame. A Luenberger observer obtains the velocity-dependent feedforward pre-control terms. The simulation uses several torque steps in both motor and generator modes. The task scheduling is implemented as a Stateflow® state machine. The Scopes subsystem contains scopes that allow you to see the simulation results.

Three-Phase Synchronous Machine Drive

Three-Phase Synchronous Machine Drive

Control the rotor speed in a Synchronous Machine (SM) based electrical drive. A high-voltage battery feeds the SM through a controlled three-phase converter for the stator windings and through a controlled two-quadrant chopper for the rotor winding. Use the model to design the SM controller, selecting architecture and gains to achieve desired performance. The Scopes subsystem contains scopes that allow you to see the simulation results.

Ports

Conserving

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Electrical conserving port associated with the gate terminals of the switching devices.

Data Types: double

Electrical conserving port associated with the positive terminal of the first DC voltage.

Data Types: double

Electrical conserving port associated with the negative terminal of the first DC voltage.

Data Types: double

Electrical conserving port associated with the positive terminal of the second DC voltage.

Data Types: double

Electrical conserving port associated with the negative terminal of the second DC voltage.

Data Types: double

Parameters

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Whether to model a chopper that operates in the first and second quadrant or in the first and fourth quadrant.

Switching Devices

This table shows how the visibility of Switching Devices parameters depends on the Switching device that you select. To learn how to read the table, see Parameter Dependencies.

Switching Devices Parameter Dependencies

Parameters and Options
Switching device
Ideal Semiconductor SwitchGTOIGBTMOSFETThyristorAveraged Switch
On-state resistanceForward voltageForward voltageDrain-source on resistanceForward voltageOn-state resistance
Off-state conductanceOn-state resistanceOn-state resistanceOff-state conductanceOn-state resistance
Threshold voltageOff-state conductanceOff-state conductanceThreshold voltageOff-state conductance
Gate trigger voltage, VgtThreshold voltageGate trigger voltage, VgtInteger for piecewise constant approximation of gate input (0 for disabled)
Gate turn-off voltage, Vgt_offGate turn-off voltage, Vgt_off
Holding currentHolding current

Switching device type for the converter.

Dependencies

See the Switching Devices Parameter Dependencies table.

For the different switching device types, the Forward voltage is taken as:

  • GTO — Minimum voltage required across the anode and cathode block ports for the gradient of the device I-V characteristic to be 1/Ron, where Ron is the value of On-state resistance

  • IGBT — Minimum voltage required across the collector and emitter block ports for the gradient of the diode I-V characteristic to be 1/Ron, where Ron is the value of On-state resistance

  • Thyristor — Minimum voltage required for the device to turn on

Dependencies

See the Switching Devices Parameter Dependencies table.

For the different switching device types, the On-state resistance is taken as:

  • GTO — Rate of change of voltage versus current above the forward voltage

  • Ideal semiconductor switch — Anode-cathode resistance when the device is on

  • IGBT — Collector-emitter resistance when the device is on

  • Thyristor — Anode-cathode resistance when the device is on

  • Averaged switch — Anode-cathode resistance when the device is on

Dependencies

See the Switching Devices Parameter Dependencies table.

Resistance between the drain and the source, which also depends on the gate-to-source voltage.

Dependencies

See the Switching Devices Parameter Dependencies table.

Conductance when the device is off. The value must be less than 1/R, where R is the value of On-state resistance.

For the different switching device types, the On-state resistance is taken as:

  • GTO — Anode-cathode conductance

  • Ideal semiconductor switch — Anode-cathode conductance

  • IGBT — Collector-emitter conductance

  • MOSFET — Drain-source conductance

  • Thyristor — Anode-cathode conductance

Dependencies

See the Switching Devices Parameter Dependencies table.

Gate voltage threshold. The device turns on when the gate voltage is above this value. For the different switching device types, the device voltage of interest is:

  • Ideal semiconductor switch — Gate-cathode voltage

  • IGBT — Gate-emitter voltage

  • MOSFET — Gate-source voltage

Dependencies

See the Switching Devices Parameter Dependencies table.

Gate-cathode voltage threshold. The device turns on when the gate-cathode voltage is above this value.

Dependencies

See the Switching Devices Parameter Dependencies table.

Gate-cathode voltage threshold. The device turns off when the gate-cathode voltage is below this value.

Dependencies

See the Switching Devices Parameter Dependencies table.

Gate current threshold. The device stays on when the current is above this value, even when the gate-cathode voltage falls below the gate trigger voltage.

Dependencies

See the Switching Devices Parameter Dependencies table.

Protection Diode

The visibility of Diode parameters depends on how you configure the protection diode Model dynamics and Reverse recovery time parameterization parameters. To learn how to read this table, see Parameter Dependencies.

Protection Diode Parameter Dependencies

Parameters and Options
Model dynamics
Diode with no dynamicsDiode with charge dynamics
Forward voltageForward voltage
On resistanceOn resistance
Off conductanceOff conductance
Junction capacitance
Peak reverse current, iRM
Initial forward current when measuring iRM
Rate of change of current when measuring iRM
Reverse recovery time parameterization
Specify stretch factorSpecify reverse recovery time directlySpecify reverse recovery charge
Reverse recovery time stretch factorReverse recovery time, trrReverse recovery charge, Qrr

Diode type. The options are:

  • Diode with no dynamics — Select this option to prioritize simulation speed using the Diode block.

  • Diode with charge dynamics — Select this option to prioritize model fidelity in terms of reverse mode charge dynamics using the commutation diode model of the Diode block.

Note

If you select Averaged Switch for the Switching Device parameter in the Switching Device setting, this parameter is not visible and Diode with no dynamics is automatically selected.

Dependencies

See the Protection Diode Parameter Dependencies table.

Minimum voltage required across the positive and negative block ports for the gradient of the diode I-V characteristic to be 1/Ron, where Ron is the value of On resistance.

Rate of change of voltage versus current above the Forward voltage.

Conductance of the reverse-biased diode.

Diode junction capacitance.

Dependencies

See the Protection Diode Parameter Dependencies table.

Peak reverse current measured by an external test circuit.

Dependencies

See the Protection Diode Parameter Dependencies table.

Initial forward current when measuring peak reverse current. This value must be greater than zero.

Dependencies

See the Protection Diode Parameter Dependencies table.

Rate of change of current when measuring peak reverse current.

Dependencies

See the Protection Diode Parameter Dependencies table.

Model for parameterizing the recovery time. When you select Specify stretch factor or Specify reverse recovery charge, you can specify a value that the block uses to derive the reverse recovery time. For more information on these options, see How the Block Calculates TM and Tau.

Dependencies

See the Protection Diode Parameter Dependencies table.

Value that the block uses to calculate Reverse recovery time, trr. Specifying the stretch factor is an easier way to parameterize the reverse recovery time than specifying the reverse recovery charge. The larger the value of the stretch factor, the longer it takes for the reverse recovery current to dissipate.

Dependencies

See the Protection Diode Parameter Dependencies table.

Interval between the time when the current initially goes to zero (when the diode turns off) and the time when the current falls to less than 10 percent of the peak reverse current.

The value of the Reverse recovery time, trr parameter must be greater than the value of the Peak reverse current, iRM parameter divided by the value of the Rate of change of current when measuring iRM parameter.

Dependencies

See the Protection Diode Parameter Dependencies table.

Value that the block uses to calculate Reverse recovery time, trr. Use this parameter if the data sheet for your diode device specifies a value for the reverse recovery charge instead of a value for the reverse recovery time.

The reverse recovery charge is the total charge that continues to dissipate when the diode turns off. The value must be less than −i2RM2a,

where:

  • iRM is the value specified for Peak reverse current, iRM.

  • a is the value specified for Rate of change of current when measuring iRM.

Dependencies

See the Protection Diode Parameter Dependencies table.

Snubbers

The Snubbers parameters tab is not visible if you set Switching device to Averaged Switch.

The table summarizes the Snubbers parameter dependencies. To learn how to read the table, see Parameter Dependencies.

Snubbers Parameter Dependencies

Snubbers Parameter Dependencies
Snubber
NoneRC Snubber
Snubber resistance
Snubber capacitance

Switching device snubber.

Dependencies

See the Snubbers Parameter Dependencies table.

Resistance of the switching device snubber.

Dependencies

See the Snubbers Parameter Dependencies table.

Capacitance of the switching device snubber.

Dependencies

See the Snubbers Parameter Dependencies table.

References

[1] Trzynadlowski, A. M. Introduction to Modern Power Electronics, 2nd Edition. Hoboken, NJ: John Wiley & Sons Inc., 2010.

Extended Capabilities

C/C++ Code Generation
Generate C and C++ code using Simulink® Coder™.

Version History

Introduced in R2018a

See Also

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